NVD2955T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

48 ns

Power Dissipation :

55W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

LIFETIME (Last Updated: 3 days ago)

Published :

2005

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

60V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Rise Time :

45ns

Power Dissipation-Max :

55W Ta

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

26 ns

Turn On Delay Time :

10 ns

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Pbfree Code :

yes

Resistance :

180mOhm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Pin Count :

3

Case Connection :

DRAIN

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

12A

Drain to Source Breakdown Voltage :

-60V

Number of Terminations :

2

Terminal Form :

Gull wing

Weight :

3.949996g