NVD2955T4G
- Mfr.Part #
- NVD2955T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 12A DPAK
- Stock
- 9,266
- In Stock :
- 9,266
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Resistance :
- 180mOhm
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 12A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 3.949996g
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 10 ns
- Turn-Off Delay Time :
- 26 ns
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 55W
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 45ns
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 55W Ta
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 6A, 10V
- Drain to Source Breakdown Voltage :
- -60V
- Fall Time (Typ) :
- 48 ns
- Published :
- 2005
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Lifecycle Status :
- LIFETIME (Last Updated: 3 days ago)
- Series :
- Automotive, AEC-Q101
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- NVD2955T4G

P-Channel Tape & Reel (TR) 180m Ω @ 6A, 10V ±20V 750pF @ 25V 30nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD2955T4G Description
NVD2955T4G P-channel MOSFET is based on an original, unique vertical structure. NVD2955T4G MOSFET results in a dramatic reduction in the on-resistance. NVD2955T4G ON Semiconductor is utilized in low voltage, high speed switching applications in power supplies, converters, and power motor controls.
NVD2955T4G Features
RoHS Compliant
IDSS and VDS(on) Specified at Elevated Temperature
AEC?Q101 Qualified and PPAP Capable
Avalanche Energy Specified
NVD2955T4G Applications
Low Voltage and High Speed Switching Applications
Power supplies
Converters
Power motor controls
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