NVD20N03L27T4G
- Mfr.Part #
- NVD20N03L27T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A DPAK
- Stock
- 43,329
- In Stock :
- 43,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 25V
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 10A, 5V
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 30V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 18.9nC @ 10V
- Turn-Off Delay Time :
- 38 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Rise Time :
- 137ns
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- ULTRA LOW ON-RESISTANCE
- Avalanche Energy Rating (Eas) :
- 288 mJ
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- HTS Code :
- 8541.29.00.95
- Continuous Drain Current (ID) :
- 20A
- Published :
- 2007
- Number of Elements :
- 1
- Reference Standard :
- AEC-Q101
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Turn On Delay Time :
- 17 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 1.75W Ta 74W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 31 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 60A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- NVD20N03L27T4G

N-Channel Tape & Reel (TR) 27m Ω @ 10A, 5V ±20V 1260pF @ 25V 18.9nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD20N03L27T4G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 288 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 38 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 5V).
NVD20N03L27T4G Features
the avalanche energy rating (Eas) is 288 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 38 ns
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
NVD20N03L27T4G Applications
There are a lot of ON Semiconductor
NVD20N03L27T4G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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