NTZS3151PT1H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

18 ns

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

150m Ω @ 950mA, 4.5V

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

23.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Vgs (Max) :

±8V

Rise Time :

12ns

Element Configuration :

Single

Turn On Delay Time :

5 ns

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

860mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

458pF @ 16V

Number of Pins :

6

Power Dissipation-Max :

170mW Ta

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

860mA

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

RoHS Compliant

Surface Mount :

yes

FET Type :

P-Channel

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)