NTZS3151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rise Time :

12ns

Turn-Off Delay Time :

23.7 ns

Length :

1.7mm

Drain to Source Breakdown Voltage :

-20V

Package / Case :

SOT-563, SOT-666

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Position :

Dual

Resistance :

150mOhm

Number of Terminations :

6

Power Dissipation :

170mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

-950mA

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Pin Count :

6

Lead Free :

Lead Free

ECCN Code :

EAR99

Current Rating :

-950mA

Turn On Delay Time :

5 ns

REACH SVHC :

No SVHC

Number of Pins :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

9 Weeks

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

150m Ω @ 950mA, 4.5V

Voltage - Rated DC :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

458pF @ 16V

Vgs (Max) :

±8V

Fall Time (Typ) :

12 ns

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

860mA Ta

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 4.5V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Nominal Vgs :

-1 V

Surface Mount :

yes

Height :

600μm

Published :

2006

Width :

1.3mm

Radiation Hardening :

No

Element Configuration :

Single

Power Dissipation-Max :

170mW Ta

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-1V