NTP45N06L
- Mfr.Part #
- NTP45N06L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A TO220AB
- Stock
- 26,121
- In Stock :
- 26,121
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 22.5A, 5V
- Current Rating :
- 45A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain-source On Resistance-Max :
- 0.028Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±15V
- HTS Code :
- 8541.29.00.95
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 45A
- Mount :
- Through Hole
- Published :
- 2005
- Turn-Off Delay Time :
- 36 ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Packaging :
- Tube
- Voltage - Rated DC :
- 60V
- Power Dissipation-Max :
- 2.4W Ta 125W Tj
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 150A
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Fall Time (Typ) :
- 158 ns
- Rise Time :
- 341ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Lead Free :
- Contains Lead
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Power Dissipation :
- 125W
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Number of Terminations :
- 3
- Datasheets
- NTP45N06L

N-Channel Tube 28m Ω @ 22.5A, 5V ±15V 1700pF @ 25V 32nC @ 5V TO-220-3
IRFU9120NPBF Description
IRFU9120NPBF is a -100v HEXFET? Power MOSFET. The HEXFET IRFU9120NPBF from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRFU9120NPBF Features
-
Ultra Low On-Resistance
-
P-Channel
-
Straight Lead (IRFU9120N)
-
Advanced Process Technology
-
Fast Switching
-
Fully Avalanche Rated
-
Lead-Free
IRFU9120NPBF Applications
-
DC motor drive
-
High-efficiency synchronous rectification in SMPS
-
Uninterruptible power supply
-
High-speed power switching
-
Hard switched and high-frequency circuits
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