NTP45N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.4W Ta 125W Tj

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

33 ns

Transistor Application :

SWITCHING

Rise Time :

101ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

125W

Published :

2004

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Continuous Drain Current (ID) :

45A

Mount :

Through Hole

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

106 ns

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

240 mJ

Vgs (Max) :

±20V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.026ohm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

26m Ω @ 22.5A, 10V

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

2.8 V

Current Rating :

45A

Pin Count :

3

Mounting Type :

Through Hole