NTP30N20G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

214W

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Qualification Status :

Not Qualified

Rise Time :

20ns

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

450 mJ

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Lead Free :

Lead Free

Current Rating :

30A

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

200V

FET Type :

N-Channel

Turn-Off Delay Time :

40 ns

Pulsed Drain Current-Max (IDM) :

90A

Fall Time (Typ) :

24 ns

Packaging :

Tube

Continuous Drain Current (ID) :

30A

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation-Max :

214W Tc

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Published :

2006

Element Configuration :

Single

Number of Elements :

1

Mount :

Through Hole

Number of Pins :

3

Number of Terminations :

3

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2.9V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 25V

Rds On (Max) @ Id, Vgs :

81m Ω @ 15A, 10V

Case Connection :

DRAIN