NTP30N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Published :

2006

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

88.2W Tc

Number of Terminations :

3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

200ns

Power Dissipation :

88.2W

Current Rating :

30A

Turn-Off Delay Time :

15.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Pulsed Drain Current-Max (IDM) :

90A

Continuous Drain Current (ID) :

30A

HTS Code :

8541.29.00.95

Avalanche Energy Rating (Eas) :

101 mJ

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

15V

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

240

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±15V

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn80Pb20)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.046Ohm

Lead Free :

Contains Lead

Fall Time (Typ) :

62 ns

JESD-609 Code :

e0

Mount :

Through Hole

Voltage - Rated DC :

60V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30