NTNS4C69NTCG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Power Dissipation (Max) :

178mW (Ta)

Number of Terminals :

3

Number of Elements :

1

Vgs (Max) :

±12V

Brand Name :

ON Semiconductor

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

Package / Case :

3-XFDFN

Surface Mount :

yes

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.9 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

75 pF @ 15 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

155mOhm @ 300mA, 4.5V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30 V

Power Dissipation-Max (Abs) :

0.178 W

FET Feature :

-

Package :

Tape and Reel (TR)

FET Type :

N-Channel

Series :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Drain-source On Resistance-Max :

0.155 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Supplier Device Package :

SOT-883 (XDFN3) (1x0.6)

JESD-30 Code :

R-PBCC-N3

Manufacturer :

ON Semiconductor

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30 V

Transistor Element Material :

SILICON

Technology :

MOSFET (Metal Oxide)

Terminal Finish :

Nickel/Gold/Palladium (Ni/Au/Pd)