NTNS3190NZT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

15.8pF @ 15V

Gate to Source Voltage (Vgs) :

8V

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

120mW Ta

Fall Time (Typ) :

110 ns

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 100mA, 4.5V

Turn-Off Delay Time :

201 ns

Package / Case :

3-XFDFN

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Continuous Drain Current (ID) :

224mA

JESD-609 Code :

e4

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Case Connection :

DRAIN

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

DS Breakdown Voltage-Min :

20V

Terminal Position :

BOTTOM

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Factory Lead Time :

7 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Current - Continuous Drain (Id) @ 25°C :

224mA Ta

FET Type :

N-Channel

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn On Delay Time :

18 ns

Rise Time :

35ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V