NTLTD7900ZR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.026ohm

Package / Case :

8-VDFN Exposed Pad

DS Breakdown Voltage-Min :

20V

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Additional Feature :

ESD PROTECTED

Pbfree Code :

No

Pin Count :

8

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

6A

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Power - Max :

1.5W

Pulsed Drain Current-Max (IDM) :

30A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-XDSO-N8

Surface Mount :

yes

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 16V

Drain Current-Max (Abs) (ID) :

6A

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.5A, 4.5V

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

FET Technology :

METAL-OXIDE SEMICONDUCTOR