NTHL080N120SC1

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Mfr.Part #
NTHL080N120SC1
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
SICFET N-CH 1200V 44A TO247-3
Stock
3,272
In Stock :
3,272

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
1200V
Factory Lead Time :
10 Weeks
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Moisture Sensitivity Level (MSL) :
Not Applicable
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 800V
Reach Compliance Code :
not_compliant
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
20V
Vgs (Max) :
+25V, -15V
Pbfree Code :
yes
Power Dissipation-Max :
348W Tc
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
4.3V @ 5mA
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
110m Ω @ 20A, 20V
JESD-609 Code :
e3
Datasheets
NTHL080N120SC1
Introducing Transistors - FETs, MOSFETs - Single onsemi NTHL080N120SC1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, NTHL080N120SC1 pinout, NTHL080N120SC1 datasheet PDF, NTHL080N120SC1 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTHL080N120SC1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTHL080N120SC1


N-Channel 110m Ω @ 20A, 20V +25V, -15V 1670pF @ 800V 56nC @ 20V 1200V TO-247-3

Description


The NTHL080N120SC1 is a MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A. In comparison to Silicon, Silicon Carbide (SiC) MOSFETs use a brand-new technology that offers superior switching performance and greater dependability. Low capacitance and gate charge are also made possible by the small chip size and low ON resistance. The maximum efficiency, quicker operating frequency, increased power density, decreased EMI and decreased system size are consequently system benefits.



Features


  • Low Effective Output Capacitance (typ. Coss= 80 pF)

  • 100% UIL Tested

  • Typ. RDS(on)= 80 mΩ

  • Ultra Low Gate Charge (typ. QG(tot)= 56 nC)

  • 1200 V @ TJ= 150°C

  • Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

  • High Speed Switching with Low Capacitance

  • These Devices are Pb?Free and are RoHS Compliant



Applications


  • UPS

  • DC/DC Converter

  • Boost Inverter

  • Industrial Motor Drive

  • PV Charger


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