NTF2955T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Current Rating :

-2.6A

Threshold Voltage :

-4V

Package / Case :

TO-261-4, TO-261AA

Drain to Source Breakdown Voltage :

-60V

Vgs (Max) :

±20V

Published :

2006

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

Fall Time (Typ) :

38 ns

Number of Terminations :

4

ECCN Code :

EAR99

Rise Time :

7.6ns

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Power Dissipation-Max :

1W Ta

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Length :

6.5mm

Width :

3.5mm

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

4

Voltage - Rated DC :

-60V

Pbfree Code :

yes

Power Dissipation :

2.3W

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

65 ns

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

185m Ω @ 2.4A, 10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Avalanche Energy Rating (Eas) :

225 mJ

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Continuous Drain Current (ID) :

2.6A

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

Number of Elements :

1

Number of Pins :

4

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

11 ns

Height :

1.57mm

Gate to Source Voltage (Vgs) :

20V

Resistance :

145mOhm

Case Connection :

DRAIN