NTF2955PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

4

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Power Dissipation-Max :

1W Ta

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation :

2.3W

Vgs (Max) :

±20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Transistor Application :

SWITCHING

FET Type :

P-Channel

Fall Time (Typ) :

38 ns

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Published :

2008

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

-2.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-261-4, TO-261AA

Turn-Off Delay Time :

65 ns

Transistor Element Material :

SILICON

Rise Time :

7.6ns

Rds On (Max) @ Id, Vgs :

185m Ω @ 2.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Number of Pins :

4

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Number of Elements :

1