NTE912

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-55°C ~ 125°C (TA)

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Power - Max :

750mW

Package :

Bag

Transition Frequency :

550 MHz

Collector Base Voltage (VCBO) :

20 V

Transistor Type :

5 NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1mA, 3V

Vce Saturation (Max) @ Ib, Ic :

230mV @ 1mA, 10mA

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PDIP-T14

Package / Case :

14-DIP (0.300", 7.62mm)

Surface Mount :

No

Collector Current-Max (IC) :

0.05 A

Series :

-

Terminal Position :

Dual

RoHS :

Compliant

Collector Emitter Voltage (VCEO) :

15 V

ECCN :

EAR99

Reach Compliance Code :

Unknown

Itar Registered :

No

Min Operating Temperature :

-55 °C

Number of Elements :

5

Emitter Base Voltage (VEBO) :

5 V

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Weight :

72.574779 g

Output Voltage :

15 V

Product Status :

Active

HTS Code :

8541.21.00.75

REACH SVHC :

Unknown

Voltage - Collector Emitter Breakdown (Max) :

24V

Height :

12.7 mm

Max Collector Current :

50 mA

Manufacturer :

NTE Electronics

Polarity :

NPN

Number of Channels :

5

Qualification Status :

Not Qualified

Number of Pins :

14

ECCN Code :

EAR99

Collector-Emitter Voltage-Max :

15 V

Configuration :

COMPLEX

Max Operating Temperature :

125 °C

DC Current Gain-Min (hFE) :

40

Current - Collector Cutoff (Max) :

500nA

Width :

76.2 mm

Number of Terminals :

14

Pin Count :

14

Transistor Application :

AMPLIFIER

Max Power Dissipation :

750 mW

Current - Collector (Ic) (Max) :

50mA

Frequency - Transition :

550MHz

Subcategory :

Other Transistors

Supplier Device Package :

14-PDIP

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

24 V

Length :

152.4 mm