NTE390

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Series :

-

Subcategory :

Other Transistors

Output Power :

Not Required(W)

Manufacturer :

NTE Electronics

Package Type :

TO-218

Power Dissipation Ambient-Max :

80 W

Power Dissipation-Max (Abs) :

80 W

Collector-Emitter Voltage-Max :

100 V

Current - Collector (Ic) (Max) :

10 A

Qualification Status :

Not Qualified

Case Connection :

COLLECTOR

Number of Terminals :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A, 4V

Power - Max :

80 W

DC Current Gain-Min (hFE) :

20

Supplier Device Package :

TO-3PN

Product Status :

Active

Current - Collector Cutoff (Max) :

700µA

Frequency - Transition :

3MHz

Mounting :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

4V @ 2.5A, 10A

Collector Current (DC) :

10(A)

JEDEC-95 Code :

TO-218

Transistor Type :

NPN

Package :

Bag

Collector-Base Voltage :

100(V)

Category :

Bipolar Power

Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

100 V

Polarity/Channel Type :

NPN

Collector Current-Max (IC) :

10 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temp Range :

-65C to 150C

Transistor Application :

SWITCHING

Terminal Position :

Single

Transistor Element Material :

SILICON

Operating Temperature :

-65°C ~ 150°C (TJ)

Transistor Polarity :

NPN

DC Current Gain :

40@1A@4V/20@3A@4V

Package / Case :

TO-3P-3, SC-65-3

Terminal Form :

THROUGH-HOLE

Frequency :

3(MHz)

Reach Compliance Code :

Unknown

Emitter-Base Voltage :

5(V)

Pin Count :

3 +Tab

Number of Elements :

1

Rad Hardened :

No

Power Dissipation :

80(W)

ECCN Code :

EAR99

Operating Temperature Classification :

Military

Surface Mount :

No

Package Shape :

RECTANGULAR