NTE39

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminals :

3

HTS Code :

8541.29.00.95

Configuration :

Single

Package :

Bag

ECCN Code :

EAR99

Operating Temp Range :

-65C to 200C

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

Other Transistors

Product Status :

Active

Current - Collector Cutoff (Max) :

50μA (ICBO)

Frequency - Transition :

-

Number of Elements :

1

Collector Current-Max (IC) :

1 A

JESD-30 Code :

O-MBCY-W3

Collector-Emitter Voltage-Max :

300 V

Current - Collector (Ic) (Max) :

1 A

Transistor Element Material :

SILICON

Transistor Type :

PNP

Package Type :

TO-39

Operating Temperature :

-65°C ~ 200°C (TJ)

Case Connection :

COLLECTOR

Surface Mount :

No

Terminal Form :

Wire

Manufacturer :

NTE Electronics

Power - Max :

10 W

Vce Saturation (Max) @ Ib, Ic :

-

Rad Hardened :

No

Supplier Device Package :

TO-39

Voltage - Collector Emitter Breakdown (Max) :

300 V

Polarity/Channel Type :

PNP

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Position :

BOTTOM

Series :

-

Emitter-Base Voltage :

6(V)

Pin Count :

3

Output Power :

Not Required(W)

Collector Current (DC) :

1(A)

DC Current Gain :

30

DC Current Gain-Min (hFE) :

30

Power Dissipation-Max (Abs) :

10 W

Mounting :

Through Hole

Power Dissipation :

10(W)

Category :

Bipolar Power

Transistor Polarity :

PNP

Reach Compliance Code :

Unknown

Operating Temperature Classification :

Military

Package Shape :

Round

Power Dissipation Ambient-Max :

10 W

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Collector-Base Voltage :

350(V)

JEDEC-95 Code :

TO-39