NTE387

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Frequency - Transition :

30MHz

Pin Count :

2 +Tab

Transistor Polarity :

NPN

Power - Max :

250 W

Configuration :

Single

Series :

-

Package :

Bag

DC Current Gain :

50

Product Status :

Active

Operating Temperature Classification :

Military

Voltage - Collector Emitter Breakdown (Max) :

150 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1A, 4V

Current - Collector Cutoff (Max) :

50μA

Rad Hardened :

No

Number of Elements :

1

Mounting Type :

Through Hole

Collector-Base Voltage :

180(V)

Vce Saturation (Max) @ Ib, Ic :

3V @ 10A, 50A

Power Dissipation :

250(W)

Frequency :

30(MHz)

Operating Temp Range :

-65C to 200C

Package / Case :

TO-204AA, TO-3

Emitter-Base Voltage :

6(V)

Collector Current (DC) :

50(A)

Manufacturer :

NTE Electronics

Output Power :

Not Required(W)

Category :

Bipolar Power

Mounting :

Through Hole

Supplier Device Package :

TO-3

Current - Collector (Ic) (Max) :

50 A

Operating Temperature :

-65°C ~ 200°C (TJ)