NTE3322

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-3P-3, SC-65-3

Series :

-

Configuration :

Single

Collector Current-Max (IC) :

60 A

Subcategory :

Insulated Gate BIP Transistors

Terminal Position :

Single

Number of Elements :

1

Current - Collector (Ic) (Max) :

60 A

Polarity/Channel Type :

N-Channel

Collector-Emitter Voltage-Max :

900 V

Switching Energy :

-

Power - Max :

170 W

Case Connection :

COLLECTOR

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

460ns/600ns

Mounting Type :

Through Hole

Test Condition :

-

Product Status :

Active

Supplier Device Package :

TO-3P

Input Type :

Standard

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Operating Temperature :

150°C (TJ)

Reach Compliance Code :

Unknown

Manufacturer :

NTE Electronics

Voltage - Collector Emitter Breakdown (Max) :

900 V

Reverse Recovery Time (trr) :

2.5 µs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

IGBT Type :

-

Gate-Emitter Voltage-Max :

25 V

Current - Collector Pulsed (Icm) :

120 A

Package :

Bag

Power Dissipation-Max (Abs) :

200 W

Number of Terminals :

3

Qualification Status :

Not Qualified

Surface Mount :

No

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 60A

Fall Time-Max (tf) :

400 ns