NTE332
- Mfr.Part #
- NTE332
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 15A TO220
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 90 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 4V
- Surface Mount :
- No
- Transistor Type :
- PNP
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature Classification :
- Military
- Number of Elements :
- 1
- Package :
- Bag
- Output Power :
- Not Required(W)
- Power Dissipation :
- 90(W)
- Frequency :
- 3(MHz)
- Frequency - Transition :
- 3MHz
- Emitter-Base Voltage :
- 5(V)
- Operating Temp Range :
- -65C to 150C
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1mA
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Subcategory :
- Other Transistors
- Qualification Status :
- Not Qualified
- Collector Current (DC) :
- 15(A)
- Package Type :
- TO-220
- Operating Temperature :
- 150°C (TJ)
- Collector-Base Voltage :
- 100(V)
- Category :
- Bipolar Power
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2.5A, 10A
- Supplier Device Package :
- TO-220
- Series :
- -
- Product Status :
- Active
- Collector-Emitter Voltage-Max :
- 100 V
- Power Dissipation Ambient-Max :
- 90 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain-Min (hFE) :
- 5
- Pin Count :
- 3 +Tab
- Package / Case :
- TO-220-3
- Terminal Position :
- Single
- Reach Compliance Code :
- Unknown
- Polarity/Channel Type :
- PNP
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Power - Max :
- 90 W
- Number of Terminals :
- 3
- Rad Hardened :
- No
- Collector Current-Max (IC) :
- 15 A
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 15 A
- Terminal Form :
- THROUGH-HOLE
- Mounting :
- Through Hole
- Case Connection :
- COLLECTOR
- Manufacturer :
- NTE Electronics
- Transistor Polarity :
- PNP
- DC Current Gain :
- 40@500MA@4V
- Datasheets
- NTE332

PNP 150°C (TJ) 1mA 1 Elements SILICON PNP TO-220-3 Through Hole
NTE332 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA, 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.100 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 100 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
NTE332 Features
the DC current gain for this device is 40 @ 500mA, 4V
the vce saturation(Max) is 3V @ 2.5A, 10A
the supplier device package of TO-220
NTE332 Applications
There are a lot of NTE Electronics, Inc
NTE332 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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