NTE323
- Mfr.Part #
- NTE323
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 120V 1A TO39
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 200mA, 1A
- Frequency :
- 30(MHz)
- JEDEC-95 Code :
- TO-39
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-MBCY-W3
- Configuration :
- Single
- Collector-Base Voltage :
- 120(V)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Current (DC) :
- 1(A)
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 1 A
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature Classification :
- Military
- Package :
- Bag
- Power Dissipation-Max (Abs) :
- 1 W
- Operating Temp Range :
- -65C to 200C
- Number of Terminals :
- 3
- Terminal Position :
- BOTTOM
- Collector Current-Max (IC) :
- 1 A
- DC Current Gain :
- 5@1A@2V/40@250MA@2V
- Qualification Status :
- Not Qualified
- Category :
- Bipolar Power
- Emitter-Base Voltage :
- 4(V)
- Supplier Device Package :
- TO-39
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA, 2V
- Terminal Form :
- Wire
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Type :
- PNP
- Power - Max :
- 1 W
- DC Current Gain-Min (hFE) :
- 5
- Series :
- -
- Output Power :
- Not Required(W)
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Surface Mount :
- No
- Operating Temperature :
- 200°C (TJ)
- Manufacturer :
- NTE Electronics
- Collector-Emitter Voltage-Max :
- 120 V
- Package Type :
- TO-39
- Transistor Polarity :
- PNP
- Power Dissipation :
- 1(W)
- ECCN Code :
- EAR99
- Product Status :
- Active
- Package Shape :
- Round
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Frequency - Transition :
- 30MHz
- Rad Hardened :
- No
- Subcategory :
- Other Transistors
- Datasheets
- NTE323

PNP 200°C (TJ) 10μA 1 Elements SILICON PNP TO-205AD, TO-39-3 Metal Can Through Hole
NTE323 Overview
In this device, the DC current gain is 40 @ 250mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 200mA, 1A.Supplier device package TO-39 comes with the product.Voltage of maximal collector-emitter is set to 120 V.The device exhibits a collector-emitter breakdown at 120 V.
NTE323 Features
the DC current gain for this device is 40 @ 250mA, 2V
the vce saturation(Max) is 2V @ 200mA, 1A
the supplier device package of TO-39
NTE323 Applications
There are a lot of NTE Electronics, Inc
NTE323 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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