NTE315

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Product Status :

Active

Manufacturer :

NTE Electronics

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

Series :

-

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

200nA (ICBO)

Collector-Emitter Voltage-Max :

50 V

DC Current Gain-Min (hFE) :

70

Terminal Position :

BOTTOM

Current - Collector (Ic) (Max) :

1 A

Package / Case :

TO-226-3, TO-92-3 Long Body

JESD-30 Code :

O-PBCY-T3

Power Dissipation-Max (Abs) :

0.75 W

Power - Max :

750 mW

Number of Terminals :

3

Frequency - Transition :

-

HTS Code :

8541.21.00.95

DC Current Gain (hFE) (Min) @ Ic, Vce :

199 @ 100mA, 2V

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

1 A

Transistor Type :

NPN

Subcategory :

Other Transistors

Operating Temperature :

120°C (TJ)

Configuration :

Single

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Package Shape :

Round

Supplier Device Package :

TO-92L

Polarity/Channel Type :

NPN

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Transistor Application :

AMPLIFIER

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

50 V