NTE159MCP

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Mfr.Part #
NTE159MCP
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 80V 0.8A TO92
Stock
76
In Stock :
76

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
Unknown
Collector Current (DC) :
0.8(A)
Transistor Polarity :
PNP
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Output Power :
Not Required(W)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mounting :
Through Hole
Package :
Bag
Number of Elements :
1
Current - Collector (Ic) (Max) :
800 mA
Operating Temp Range :
-55C to 150C
Package Type :
TO-92
JEDEC-95 Code :
TO-92
Supplier Device Package :
TO-92
Package Shape :
Round
Number of Terminals :
3
Mounting Type :
Through Hole
Power - Max :
625 mW
Terminal Form :
Wire
DC Current Gain-Min (hFE) :
180
HTS Code :
8541.21.00.75
Manufacturer :
NTE Electronics
Polarity/Channel Type :
NPN AND PNP
Power Dissipation :
0.625(W)
Collector-Base Voltage :
80(V)
Rad Hardened :
No
Operating Temperature Classification :
Military
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA, 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Qualification Status :
Not Qualified
Subcategory :
BIP General Purpose Small Signal
Emitter-Base Voltage :
5(V)
Collector-Emitter Voltage-Max :
80 V
Frequency - Transition :
250MHz
ECCN Code :
EAR99
Voltage - Collector Emitter Breakdown (Max) :
80 V
Pin Count :
3
Additional Feature :
MATCHED COMPLIMENTARY PAIR CONTAINS NTE123AP AND NTE159
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
50nA (ICBO)
Configuration :
Single
Transistor Element Material :
SILICON
Series :
-
Product Status :
Active
Surface Mount :
No
Transistor Type :
PNP
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Category :
Bipolar Small Signal
Collector Current-Max (IC) :
1 A
JESD-30 Code :
O-PBCY-W3
Datasheets
NTE159MCP
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE159MCP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), NTE159MCP pinout, NTE159MCP datasheet PDF, NTE159MCP amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE159MCP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE159MCP


PNP -55°C ~ 150°C (TJ) 50nA (ICBO) 1 Elements SILICON NPN AND PNP TO-226-3, TO-92-3 (TO-226AA) Through Hole

NTE159MCP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.The product comes in the supplier device package of TO-92.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.

NTE159MCP Features


the DC current gain for this device is 50 @ 10mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-92


NTE159MCP Applications


There are a lot of NTE Electronics, Inc
NTE159MCP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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