NTE130MP
- Mfr.Part #
- NTE130MP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO3
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- -
- Frequency - Transition :
- 2.5MHz
- Min Operating Temperature :
- -65 °C
- Weight :
- 72.574779 g
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A, 4V
- Number of Pins :
- 3
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Element Material :
- SILICON
- Additional Feature :
- MATCHED PAIR OF NTE130
- Transistor Type :
- NPN
- Max Operating Temperature :
- 200 °C
- Product Status :
- Active
- RoHS :
- Compliant
- JESD-30 Code :
- O-MBFM-P2
- Collector Base Voltage (VCBO) :
- 100 V
- Reach Compliance Code :
- Unknown
- Emitter Base Voltage (VEBO) :
- 7 V
- Current - Collector (Ic) (Max) :
- 15 A
- Length :
- 152.4 mm
- DC Current Gain-Min (hFE) :
- 20
- Package / Case :
- TO-204AA, TO-3
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Collector-Emitter Voltage-Max :
- 60 V
- Package :
- Bag
- Collector Current-Max (IC) :
- 15 A
- Power - Max :
- 115 W
- Qualification Status :
- Not Qualified
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Number of Elements :
- 2
- Package Shape :
- Round
- Case Connection :
- COLLECTOR
- Configuration :
- SEPARATE, 2 ELEMENTS
- Power Dissipation Ambient-Max :
- 115 W
- Width :
- 76.2 mm
- Collector Emitter Voltage (VCEO) :
- 60 V
- ECCN Code :
- EAR99
- Number of Terminals :
- 2
- Max Collector Current :
- 15 A
- Surface Mount :
- No
- Manufacturer :
- NTE Electronics
- Subcategory :
- Other Transistors
- Terminal Form :
- PIN/PEG
- Height :
- 12.7 mm
- JEDEC-95 Code :
- TO-3
- Supplier Device Package :
- TO-3
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 700µA
- Datasheets
- NTE130MP
NTE130MP Documents

NPN -65°C ~ 200°C (TJ) 700μA 2 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE130MP Overview
In this device, the DC current gain is 20 @ 4A, 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 3.3A, 10A.With the emitter base voltage set at 7 V, an efficient operation can be achieved.Product comes in the supplier's device package TO-3.60 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15 A volts at Single BJT transistors maximum.
NTE130MP Features
the DC current gain for this device is 20 @ 4A, 4V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7 V
the supplier device package of TO-3
NTE130MP Applications
There are a lot of NTE Electronics, Inc
NTE130MP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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