NTD95N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

84 mJ

Power Dissipation-Max :

1.25W Ta 86W Tc

FET Type :

N-Channel

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

24V

Drain Current-Max (Abs) (ID) :

32A

Peak Reflow Temperature (Cel) :

240

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

TIN LEAD

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2.4pF @ 20V

DS Breakdown Voltage-Min :

24V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Ta 32A Tc

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Drain-source On Resistance-Max :

0.005ohm

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

No