NTD95N02R

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Packaging :

Tube

Number of Elements :

1

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Breakdown Voltage :

24V

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

240

Power Dissipation :

86W

Published :

2006

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Fall Time (Typ) :

70 ns

Rise Time :

82ns

Power Dissipation-Max :

1.25W Ta 86W Tc

Continuous Drain Current (ID) :

32A

Turn-Off Delay Time :

26 ns

Case Connection :

DRAIN

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

12A Ta 32A Tc

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Current Rating :

95A

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.005ohm

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

24V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 20V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

84 mJ

Terminal Form :

Gull wing

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V