NTBGS002N06C
- Mfr.Part #
- NTBGS002N06C
- Manufacturer
- onsemi
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- POWER MOSFET, 60 V, 2.2 M?, 211
- Stock
- 736
- In Stock :
- 736
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- Package :
- Digi-Reel?
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.002 Ω
- FET Feature :
- -
- Mounting Type :
- Surface Mount
- Brand :
- onsemi
- Number of Elements per Chip :
- 1
- Package Type :
- TO-263-7
- Package Shape :
- RECTANGULAR
- Manufacturer :
- onsemi
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- Channel Type :
- N
- Input Capacitance (Ciss) (Max) @ Vds :
- 4620 pF @ 30 V
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Ta), 211A (Tc)
- Channel Mode :
- Enhancement
- Packaging :
- Cut Tape
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60 V
- Pin Count :
- 7
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Surface Mount :
- yes
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 242 W
- JESD-30 Code :
- R-PSSO-G6
- Series :
- -
- Rds On (Max) @ Id, Vgs :
- 2.1mOhm @ 45A, 12V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Number of Terminals :
- 6
- MSL :
- MSL 1 - Unlimited
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V, 12V
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-263CB
- Gate Charge (Qg) (Max) @ Vgs :
- 62.1 nC @ 10 V
- Maximum Operating Temperature :
- + 175 C
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 3.7W (Ta), 178W (Tc)
- Continuous Drain Current Id :
- 211
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Supplier Device Package :
- D2PAK (TO-263)
- Power Dissipation :
- 178
- DS Breakdown Voltage-Min :
- 60 V
- Vgs(th) (Max) @ Id :
- 4V @ 225μA
- Feedback Cap-Max (Crss) :
- 26 pF
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Drain Current-Max (Abs) (ID) :
- 252 A
- RoHS :
- Details
- Datasheets
- NTBGS002N06C

N-Channel Cut Tape 2.1mOhm @ 45A, 12V ±20V 4620 pF @ 30 V 62.1 nC @ 10 V 60 V TO-263-7, D2Pak (6 Leads + Tab)
NTBGS002N06C Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4620 pF @ 30 V.The drain current is the maximum continuous current this device can conduct, which is 252 A.A normal operation of the DS requires keeping the breakdown voltage above 60 V.This transistor requires a drain-source voltage (Vdss) of 60 V.
NTBGS002N06C Features
a 60 V drain to source voltage (Vdss)
NTBGS002N06C Applications
There are a lot of onsemi
NTBGS002N06C applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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