NTB85N03T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

28V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

45A

RoHS Status :

Non-RoHS Compliant

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Rds On Max :

6.8 mΩ

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

15A

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Rise Time :

22ns

Voltage - Rated DC :

28V

Number of Elements :

1

Case Connection :

DRAIN

Number of Terminations :

2

Power Dissipation :

80W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e0

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Turn-Off Delay Time :

32 ns

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-55°C

Max Power Dissipation :

80W

Continuous Drain Current (ID) :

85A

Input Capacitance :

2.15nF

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

28V

Fall Time (Typ) :

30 ns

Peak Reflow Temperature (Cel) :

240

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Published :

2005

Package / Case :

D2PAK

Max Operating Temperature :

150°C

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

61 mJ

Transistor Application :

SWITCHING

Current Rating :

85A

Lead Free :

Contains Lead

Drain to Source Resistance :

6.1mOhm