NTB85N03G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

80W Tc

Current Rating :

85A

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 40A, 10V

Terminal Form :

Gull wing

Pin Count :

3

Element Configuration :

Single

Voltage - Rated DC :

28V

Drain to Source Breakdown Voltage :

28V

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

45A

Fall Time (Typ) :

30 ns

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

15A

Packaging :

Tube

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

32 ns

Continuous Drain Current (ID) :

85A

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0068Ohm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

61 mJ

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 24V

Rise Time :

22ns

Mount :

Surface Mount

Power Dissipation :

80W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2005