NTB85N03G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

28V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

61 mJ

Published :

2005

Terminal Form :

Gull wing

Packaging :

Tube

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

80W

Transistor Application :

SWITCHING

Current Rating :

85A

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

45A

Number of Terminations :

2

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Rise Time :

22ns

Turn-Off Delay Time :

32 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Voltage - Rated DC :

28V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

15A

Number of Elements :

1

Drain-source On Resistance-Max :

0.0068Ohm

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Pin Count :

3

Continuous Drain Current (ID) :

85A

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 24V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

30 ns

Power Dissipation-Max :

80W Tc