NTB85N03G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

30 ns

Voltage - Rated DC :

28V

FET Type :

N-Channel

Published :

2005

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

80W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

32 ns

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

28V

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

85A

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Rise Time :

22ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

61 mJ

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 40A, 10V

Case Connection :

DRAIN

Power Dissipation :

80W

Drain-source On Resistance-Max :

0.0068Ohm

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 24V

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

15A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Terminal Form :

Gull wing

Element Configuration :

Single

Current Rating :

85A

Mounting Type :

Surface Mount

Pin Count :

3

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

45A

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)