NSVUMZ1NT1G
- Mfr.Part #
- NSVUMZ1NT1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- NPN PNP BIPOLAR TRANSISTOR
- Stock
- 26,772
- In Stock :
- 26,772
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Polarity :
- Complementary
- Configuration :
- SEPARATE, 2 ELEMENTS
- Package :
- Bulk
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 2µA
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Manufacturer :
- onsemi
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 200mA
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- SC-88/SC70-6/SOT-363
- JESD-30 Code :
- R-PDSO-G6
- Terminal Form :
- Gull wing
- Collector Current-Max (IC) :
- 0.2 A
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Cut Tape
- Brand :
- onsemi
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Factory Lead Time :
- 43 Weeks, 1 Day
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Polarity/Channel Type :
- NPN AND PNP
- Reference Standard :
- AEC-Q101
- Base Product Number :
- NSVUMZ1
- VCEsat-Max :
- 0.25 V
- Package Shape :
- RECTANGULAR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 6V
- Power Dissipation-Max (Abs) :
- 0.25 W
- Terminal Position :
- Dual
- Transistor Type :
- NPN, PNP Complementary
- Power - Max :
- 250mW
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Number of Terminals :
- 6
- Number of Elements :
- 2
- DC Current Gain-Min (hFE) :
- 200
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Collector-Emitter Voltage-Max :
- 50 V
- Brand Name :
- ON Semiconductor
- Product Category :
- onsemi
- Series :
- *
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Frequency - Transition :
- 114MHz, 142MHz
- Datasheets
- NSVUMZ1NT1G

NPN, PNP Complementary -55°C ~ 150°C (TJ) 2µA 2 Elements SILICON NPN AND PNP 6-TSSOP, SC-88, SOT-363 Cut Tape Surface Mount
NSVUMZ1NT1G Overview
This device has a DC current gain of 200 @ 2mA, 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of SC-88/SC70-6/SOT-363.Maximum collector-emitter voltage can be set to 50 V.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.
NSVUMZ1NT1G Features
the DC current gain for this device is 200 @ 2mA, 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
the supplier device package of SC-88/SC70-6/SOT-363
NSVUMZ1NT1G Applications
There are a lot of onsemi
NSVUMZ1NT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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