NSVUMZ1NT1G

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Mfr.Part #
NSVUMZ1NT1G
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
NPN PNP BIPOLAR TRANSISTOR
Stock
26,772
In Stock :
26,772

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Polarity :
Complementary
Configuration :
SEPARATE, 2 ELEMENTS
Package :
Bulk
Operating Temperature :
-55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max) :
2µA
Mounting Type :
Surface Mount
Transistor Application :
AMPLIFIER
Manufacturer :
onsemi
Product Status :
Active
Current - Collector (Ic) (Max) :
200mA
Transistor Element Material :
SILICON
Supplier Device Package :
SC-88/SC70-6/SOT-363
JESD-30 Code :
R-PDSO-G6
Terminal Form :
Gull wing
Collector Current-Max (IC) :
0.2 A
Voltage - Collector Emitter Breakdown (Max) :
50V
Packaging :
Cut Tape
Brand :
onsemi
Package / Case :
6-TSSOP, SC-88, SOT-363
Factory Lead Time :
43 Weeks, 1 Day
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Polarity/Channel Type :
NPN AND PNP
Reference Standard :
AEC-Q101
Base Product Number :
NSVUMZ1
VCEsat-Max :
0.25 V
Package Shape :
RECTANGULAR
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Power Dissipation-Max (Abs) :
0.25 W
Terminal Position :
Dual
Transistor Type :
NPN, PNP Complementary
Power - Max :
250mW
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Number of Terminals :
6
Number of Elements :
2
DC Current Gain-Min (hFE) :
200
Surface Mount :
yes
JESD-609 Code :
e3
Collector-Emitter Voltage-Max :
50 V
Brand Name :
ON Semiconductor
Product Category :
onsemi
Series :
*
Terminal Finish :
Matte Tin (Sn) - annealed
Frequency - Transition :
114MHz, 142MHz
Datasheets
NSVUMZ1NT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVUMZ1NT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Package / Case:6-TSSOP, SC-88, SOT-363, NSVUMZ1NT1G pinout, NSVUMZ1NT1G datasheet PDF, NSVUMZ1NT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVUMZ1NT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVUMZ1NT1G


NPN, PNP Complementary -55°C ~ 150°C (TJ) 2µA 2 Elements SILICON NPN AND PNP 6-TSSOP, SC-88, SOT-363 Cut Tape Surface Mount

NSVUMZ1NT1G Overview


This device has a DC current gain of 200 @ 2mA, 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of SC-88/SC70-6/SOT-363.Maximum collector-emitter voltage can be set to 50 V.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.

NSVUMZ1NT1G Features


the DC current gain for this device is 200 @ 2mA, 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
the supplier device package of SC-88/SC70-6/SOT-363


NSVUMZ1NT1G Applications


There are a lot of onsemi
NSVUMZ1NT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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