NSVT45011MW6T3G

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Mfr.Part #
NSVT45011MW6T3G
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS 2NPN 45V 0.1A SC88/SC70-6
Stock
9,000
In Stock :
9,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays
Number of Elements :
2
Pbfree Code :
yes
Power Dissipation :
380mW
Radiation Hardening :
No
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Max Power Dissipation :
380mW
Published :
2013
Number of Pins :
6
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Max Collector Current :
100mA
Transition Frequency :
100MHz
Transistor Type :
2 NPN (Dual)
Collector Base Voltage (VCBO) :
50V
ECCN Code :
EAR99
Frequency :
100MHz
Pin Count :
6
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Collector Emitter Voltage (VCEO) :
45V
Operating Temperature :
-55°C~150°C TJ
Current - Collector (Ic) (Max) :
100mA
Collector Emitter Breakdown Voltage :
45V
Package / Case :
6-TSSOP, SC-88, SOT-363
Polarity :
NPN
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Emitter Base Voltage (VEBO) :
6V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Factory Lead Time :
8 Weeks
Current - Collector Cutoff (Max) :
15nA ICBO
Datasheets
NSVT45011MW6T3G
Introducing Transistors - Bipolar (BJT) - Arrays onsemi NSVT45011MW6T3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, Mounting Type:Surface Mount, NSVT45011MW6T3G pinout, NSVT45011MW6T3G datasheet PDF, NSVT45011MW6T3G amp .Beyond Transistors - Bipolar (BJT) - Arrays onsemi NSVT45011MW6T3G ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVT45011MW6T3G


NSVT45011MW6T3G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at

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