NSVEMT1DXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lead Free :

Lead Free

Factory Lead Time :

17 Weeks

Published :

2005

Reference Standard :

AEC-Q101

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Power - Max :

500mW

Frequency - Transition :

140MHz

Max Collector Current :

100mA

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Elements :

2

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Voltage (VCEO) :

500mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS

Pbfree Code :

yes

Package / Case :

SOT-563, SOT-666

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Max Power Dissipation :

500mW

Terminal Form :

Flat

VCEsat-Max :

0.5 V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F6

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

500pA ICBO

Transition Frequency :

140MHz