NSVBSS63LT1G

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Mfr.Part #
NSVBSS63LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 100V 0.1A SOT23-3
Stock
1,959
In Stock :
1,959

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Published :
2009
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 25mA 1V
Number of Pins :
3
Pbfree Code :
yes
Mounting Type :
Surface Mount
Current - Collector (Ic) (Max) :
100mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
ROHS3 Compliant
Max Collector Current :
100mA
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
100V
Collector Base Voltage (VCBO) :
110V
ECCN Code :
EAR99
Radiation Hardening :
No
Gain Bandwidth Product :
95MHz
Collector Emitter Voltage (VCEO) :
250mV
Vce Saturation (Max) @ Ib, Ic :
250mV @ 2.5mA, 25mA
hFE Min :
30
Halogen Free :
Halogen Free
Factory Lead Time :
8 Weeks
Pin Count :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
225mW
Datasheets
NSVBSS63LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVBSS63LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, NSVBSS63LT1G pinout, NSVBSS63LT1G datasheet PDF, NSVBSS63LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVBSS63LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVBSS63LT1G


PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NSVBSS63LT1G Overview


This device has a DC current gain of 30 @ 25mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 250mV @ 2.5mA, 25mA means Ic has reached its maximum value(saturated).A maximum collector current of 100mA volts is possible.

NSVBSS63LT1G Features


the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA


NSVBSS63LT1G Applications


There are a lot of ON Semiconductor
NSVBSS63LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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