NSVBCX17LT1G
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- Mfr.Part #
- NSVBCX17LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 341
- In Stock ：
- 341
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 620mV
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Contact Plating :
- Tin
- Power - Max :
- 225mW
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Published :
- 2005
- Number of Terminations :
- 3
- Max Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Reference Standard :
- AEC-Q101
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- NSVBCX17LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBCX17LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 620mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 500mA volts.
NSVBCX17LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
NSVBCX17LT1G Applications
There are a lot of ON Semiconductor
NSVBCX17LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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