NSVBCW32LT1G

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Mfr.Part #
NSVBCW32LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 32V 0.1A SOT23-3
Stock
8,280
In Stock :
8,280

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Reference Standard :
AEC-Q101
Transistor Type :
NPN
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Collector Emitter Breakdown Voltage :
32V
Published :
2014
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
250mV @ 500µA, 10mA
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Factory Lead Time :
4 Weeks
Number of Elements :
1
Max Power Dissipation :
225mW
Transistor Element Material :
SILICON
Max Collector Current :
100mA
Terminal Finish :
Tin (Sn)
Terminal Position :
Dual
Lead Free :
Lead Free
Power - Max :
225mW
Current - Collector Cutoff (Max) :
100nA ICBO
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
250mV
Pbfree Code :
yes
Number of Pins :
3
Number of Terminations :
3
Datasheets
NSVBCW32LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVBCW32LT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, NSVBCW32LT1G pinout, NSVBCW32LT1G datasheet PDF, NSVBCW32LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVBCW32LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVBCW32LT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NSVBCW32LT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500μA, 10mA.Collector current can be as low as 100mA volts at its maximum.

NSVBCW32LT1G Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA


NSVBCW32LT1G Applications


There are a lot of ON Semiconductor
NSVBCW32LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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