NSVBCP56-10T3G
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- Mfr.Part #
- NSVBCP56-10T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 3,153
- In Stock ：
- 3,153
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1.5W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 100V
- Power - Max :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 500mV
- Mounting Type :
- Surface Mount
- Reference Standard :
- AEC-Q101
- Transition Frequency :
- 130MHz
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Published :
- 2005
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 130MHz
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Datasheets
- NSVBCP56-10T3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSVBCP56-10T3G Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 130MHz.A maximum collector current of 1A volts is possible.
NSVBCP56-10T3G Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
NSVBCP56-10T3G Applications
There are a lot of ON Semiconductor
NSVBCP56-10T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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