NSVBCP53-16T3G

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Mfr.Part #
NSVBCP53-16T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
PNP 80 V BIPOLAR TRANSISTOR
Stock
40,000
In Stock :
40,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
1.5A
Number of Pins :
4
Polarity/Channel Type :
PNP
Power - Max :
1.5W
Mount :
Surface Mount
Collector Base Voltage (VCBO) :
100V
Terminal Position :
Dual
JESD-609 Code :
e3
Max Power Dissipation :
1.5W
Collector Emitter Voltage (VCEO) :
500mV
Terminal Form :
Gull wing
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-261-4, TO-261AA
Radiation Hardening :
No
Pbfree Code :
yes
Transistor Element Material :
SILICON
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Transistor Application :
AMPLIFIER
Number of Terminations :
4
Factory Lead Time :
8 Weeks
Operating Temperature :
-65°C~150°C TJ
Frequency - Transition :
50MHz
Packaging :
Tape and Reel (TR)
Published :
2008
Current - Collector Cutoff (Max) :
100nA ICBO
Configuration :
Single
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Terminal Finish :
Tin (Sn)
Case Connection :
COLLECTOR
Reference Standard :
AEC-Q101
Transition Frequency :
50MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Datasheets
NSVBCP53-16T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVBCP53-16T3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, NSVBCP53-16T3G pinout, NSVBCP53-16T3G datasheet PDF, NSVBCP53-16T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVBCP53-16T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVBCP53-16T3G


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NSVBCP53-16T3G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 1.5A volts.

NSVBCP53-16T3G Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 50MHz


NSVBCP53-16T3G Applications


There are a lot of ON Semiconductor
NSVBCP53-16T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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