NSVBC858CLT1G
- Mfr.Part #
- NSVBC858CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 5,640
- In Stock :
- 5,640
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reference Standard :
- AEC-Q101
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- -30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 100mA
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Height :
- 1.11mm
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Width :
- 2.64mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Length :
- 3.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 300mW
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -650mV
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Published :
- 2005
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Datasheets
- NSVBC858CLT1G

PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
NSVBC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
NSVBC858CLT1G Applications
There are a lot of ON Semiconductor
NSVBC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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