NSVBC858BLT1G
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- Mfr.Part #
- NSVBC858BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 3,812
- In Stock ：
- 3,812
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Height :
- 1.01mm
- Terminal Finish :
- Tin (Sn)
- Width :
- 1.4mm
- Mounting Type :
- Surface Mount
- Max Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -650mV
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Radiation Hardening :
- No
- Published :
- 2009
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Frequency - Transition :
- 100MHz
- Max Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Number of Elements :
- 1
- Reference Standard :
- AEC-Q101
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NSVBC858BLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC858BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
NSVBC858BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
NSVBC858BLT1G Applications
There are a lot of ON Semiconductor
NSVBC858BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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