NSVBC857CWT1G
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- Mfr.Part #
- NSVBC857CWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC70-3
- Stock
- 29,753
- In Stock ：
- 29,753
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Saturation Voltage :
- -900mV
- Collector Base Voltage (VCBO) :
- -50V
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Current - Collector (Ic) (Max) :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Continuous Collector Current :
- -100mA
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 650mV
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Power Dissipation :
- 150mW
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 420
- Datasheets
- NSVBC857CWT1G
PNP -55°C~150°C TJ 15nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
NSVBC857CWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -900mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Continuous collector voltages of -100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.During maximum operation, collector current can be as low as 100mA volts.
NSVBC857CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -900mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
NSVBC857CWT1G Applications
There are a lot of ON Semiconductor
NSVBC857CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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