NSVBC857BLT3G
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- Mfr.Part #
- NSVBC857BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 2,407
- In Stock ：
- 2,407
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Power - Max :
- 225mW
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Frequency - Transition :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Reference Standard :
- AEC-Q101
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 650mV
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Published :
- 2005
- Max Collector Current :
- 100mA
- Datasheets
- NSVBC857BLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC857BLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
NSVBC857BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
NSVBC857BLT3G Applications
There are a lot of ON Semiconductor
NSVBC857BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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