NSVBC857BLT3G
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- Mfr.Part #
- NSVBC857BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 2,407
- In Stock ：
- 2,407
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 225mW
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Reference Standard :
- AEC-Q101
- Max Collector Current :
- 100mA
- Terminal Finish :
- Tin (Sn)
- Datasheets
- NSVBC857BLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC857BLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
NSVBC857BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
NSVBC857BLT3G Applications
There are a lot of ON Semiconductor
NSVBC857BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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