NSVBC850BLT1G
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- Mfr.Part #
- NSVBC850BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 5,900
- In Stock ：
- 5,900
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Voltage (VCEO) :
- 600mV
- Frequency - Transition :
- 100MHz
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Power - Max :
- 225mW
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Max Power Dissipation :
- 225mW
- JESD-609 Code :
- e3
- Published :
- 2009
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NSVBC850BLT1G
NPN -55°C~150°C TJ 15nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC850BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.During maximum operation, collector current can be as low as 100mA volts.
NSVBC850BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
NSVBC850BLT1G Applications
There are a lot of ON Semiconductor
NSVBC850BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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