NSVBC847BLT3G
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- Mfr.Part #
- NSVBC847BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 306
- In Stock ：
- 306
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 225mW
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 225mW
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Reference Standard :
- AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Published :
- 2009
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 600mV
- Datasheets
- NSVBC847BLT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC847BLT3G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
NSVBC847BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSVBC847BLT3G Applications
There are a lot of ON Semiconductor
NSVBC847BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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