NSVBC846BM3T5G
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- Mfr.Part #
- NSVBC846BM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT723
- Stock
- 17,860
- In Stock ：
- 17,860
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 265mW
- Collector Emitter Voltage (VCEO) :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- SOT-723
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Published :
- 2011
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Continuous Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 600mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- NSVBC846BM3T5G
NPN -55°C~150°C TJ 15nA ICBO NPN SOT-723 Tape & Reel (TR) Surface Mount
NSVBC846BM3T5G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
NSVBC846BM3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSVBC846BM3T5G Applications
There are a lot of ON Semiconductor
NSVBC846BM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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