NSVBC817-16LT1G
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- Mfr.Part #
- NSVBC817-16LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 8,219
- In Stock ：
- 8,219
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 225mW
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Factory Lead Time :
- 5 Weeks
- Published :
- 2009
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Max Collector Current :
- 500mA
- Reference Standard :
- AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Current - Collector (Ic) (Max) :
- 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 700mV
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Collector Emitter Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 1.437803g
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NSVBC817-16LT1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBC817-16LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
NSVBC817-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NSVBC817-16LT1G Applications
There are a lot of ON Semiconductor
NSVBC817-16LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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