NST45011MW6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

8 Weeks

Number of Terminations :

6

Max Power Dissipation :

380mW

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Length :

2.2mm

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

15nA ICBO

Number of Elements :

2

Max Breakdown Voltage :

45V

hFE Min :

150

RoHS Status :

ROHS3 Compliant

Width :

1.35mm

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Terminal Form :

Gull wing

Height :

1mm

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Emitter Base Voltage (VEBO) :

6V

Polarity :

NPN

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Contact Plating :

Tin

Gain Bandwidth Product :

100MHz

Transistor Type :

2 NPN (Dual) Matched Pair

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

600mV

Collector Emitter Voltage (VCEO) :

45V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

NST45011M

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Lead Free :

Lead Free

Power Dissipation :

380mW

Collector Emitter Breakdown Voltage :

45V

Frequency :

100MHz

Mounting Type :

Surface Mount

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

2007

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

Pin Count :

6