NP83P06PDG-E1-AY
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- Mfr.Part #
- NP83P06PDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 83A TO263
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 10100pF @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 36 ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1.8W Ta 150W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 83A
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 83A Tc
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 8.8m Ω @ 41.5A, 10V
- Published :
- 2007
- Turn-Off Delay Time :
- 230 ns
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Rise Time :
- 20ns
- Fall Time (Typ) :
- 200 ns
- Avalanche Energy Rating (Eas) :
- 240 mJ
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 249A
- FET Type :
- P-Channel
- Power Dissipation :
- 1.8W
- Datasheets
- NP83P06PDG-E1-AY
P-Channel Tape & Reel (TR) 8.8m Ω @ 41.5A, 10V ±20V 10100pF @ 10V 190nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP83P06PDG-E1-AY Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 240 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10100pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 83A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 230 ns.Peak drain current is 249A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 36 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NP83P06PDG-E1-AY Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 83A
the turn-off delay time is 230 ns
based on its rated peak drain current 249A.
a 60V drain to source voltage (Vdss)
NP83P06PDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP83P06PDG-E1-AY applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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