NP83P04PDG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Operating Temperature (Max) :

175°C

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.008Ohm

Mount :

Surface Mount

Published :

2007

Max Power Dissipation :

1.8W

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

83A Tc

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

83A

Input Capacitance (Ciss) (Max) @ Vds :

9820pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 41.5A, 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

249A

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

315 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

40V