NP75N04YUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

1W Ta 138W Tc

Operating Temperature :

175°C TJ

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

6 ns

Mount :

Surface Mount

Pin Count :

8

DS Breakdown Voltage-Min :

40V

Turn-Off Delay Time :

66 ns

Rise Time :

10ns

Power Dissipation :

1W

Vgs (Max) :

±20V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Turn On Delay Time :

27 ns

Feedback Cap-Max (Crss) :

450 pF

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SMD, Flat Lead Exposed Pad

Continuous Drain Current (ID) :

75A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 37.5A, 10V

Radiation Hardening :

No